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MBRM110ET3

MBRM110ET3 onsemi

MBRM110E-D.pdf
Hersteller: onsemi
Description: DIODE SCHOTTKY 10V 1A POWERMITE
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 10 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: Powermite
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-216AA
Packaging: Tape & Reel (TR)
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Technische Details MBRM110ET3 onsemi

Description: DIODE SCHOTTKY 10V 1A POWERMITE, Current - Reverse Leakage @ Vr: 1 µA @ 10 V, Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A, Voltage - DC Reverse (Vr) (Max): 10 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: Powermite, Current - Average Rectified (Io): 1A, Technology: Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-216AA, Packaging: Tape & Reel (TR).