
MCAC110N06Y-TP MCC (Micro Commercial Components)

Description: MOSFET N-CH 60 110A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3196 pF @ 25 V
auf Bestellung 9990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5000+ | 0.93 EUR |
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Technische Details MCAC110N06Y-TP MCC (Micro Commercial Components)
Description: MOSFET N-CH 60 110A DFN5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V, Power Dissipation (Max): 104W (Tj), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN5060, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 61.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3196 pF @ 25 V.
Weitere Produktangebote MCAC110N06Y-TP nach Preis ab 1.02 EUR bis 3.48 EUR
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MCAC110N06Y-TP | Hersteller : MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 104W (Tj) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN5060 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 61.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3196 pF @ 25 V |
auf Bestellung 9990 Stücke: Lieferzeit 10-14 Tag (e) |
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