MCAC5D2N10Y-TP MICRO COMMERCIAL COMPONENTS
Hersteller: MICRO COMMERCIAL COMPONENTS
Description: MICRO COMMERCIAL COMPONENTS - MCAC5D2N10Y-TP - Leistungs-MOSFET, n-Kanal, 100 V, 117 A, 0.0052 ohm, DFN5060, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 117A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.4V
euEccn: NLR
Verlustleistung: 138W
Bauform - Transistor: DFN5060
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0052ohm
SVHC: No SVHC (25-Jun-2025)
| Anzahl | Privatkunde |
|---|---|
| 128+ | 1.96 EUR |
| 146+ | 1.59 EUR |
| 177+ | 1.21 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.01 EUR |
| 5000+ | 0.94 EUR |
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Technische Details MCAC5D2N10Y-TP MICRO COMMERCIAL COMPONENTS
Description: MICRO COMMERCIAL COMPONENTS - MCAC5D2N10Y-TP - Leistungs-MOSFET, n-Kanal, 100 V, 117 A, 0.0052 ohm, DFN5060, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 117A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.4V, euEccn: NLR, Verlustleistung: 138W, Bauform - Transistor: DFN5060, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.0052ohm, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote MCAC5D2N10Y-TP nach Preis ab 0.87 EUR bis 2.92 EUR
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MCAC5D2N10Y-TP | MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET,DFN5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 117A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Power Dissipation (Max): 138W (Tj) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: DFN5060 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V |
auf Bestellung 3579 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCAC5D2N10Y-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 138W (Tj)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
Description: N-CHANNEL MOSFET,DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Power Dissipation (Max): 138W (Tj)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 50 V
auf Bestellung 3579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.92 EUR |
| 12+ | 1.84 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| 1000+ | 0.89 EUR |
| 2000+ | 0.87 EUR |


