MCAC85N04YHE3-TP Micro Commercial Co
Hersteller: Micro Commercial Co
Description: POWER MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tj)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
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Technische Details MCAC85N04YHE3-TP Micro Commercial Co
Description: POWER MOSFET, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: DFN5060, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 100W (Tj), Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: N-Channel.
Weitere Produktangebote MCAC85N04YHE3-TP nach Preis ab 0.77 EUR bis 1.84 EUR
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MCAC85N04YHE3-TP | Micro Commercial Co |
Description: POWER MOSFET Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 100W (Tj) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: DFN5060 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCAC85N04YHE3-TP |
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Hersteller: Micro Commercial Co
Description: POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tj)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060
Description: POWER MOSFET
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 100W (Tj)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1171 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DFN5060
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.84 EUR |
| 13+ | 1.64 EUR |
| 25+ | 1.56 EUR |
| 100+ | 1.29 EUR |
| 250+ | 1.2 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.83 EUR |
| 2500+ | 0.77 EUR |