MCAC90N10Y-TP Micro Commercial Components (MCC)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.82 EUR |
| 10+ | 3.09 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.75 EUR |
| 1000+ | 1.55 EUR |
| 2500+ | 1.51 EUR |
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Technische Details MCAC90N10Y-TP Micro Commercial Components (MCC)
Description: N-CHANNEL MOSFET, DFN5060, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: DFN5060, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 120W, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 90A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote MCAC90N10Y-TP
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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MCAC90N10Y-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET, DFN5060 Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: DFN5060 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 120W Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
MCAC90N10Y-TP | Micro Commercial Co |
Description: N-CHANNEL MOSFET, DFN5060 Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: DFN5060 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 120W Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 90A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MCAC90N10Y-TP |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: N-CHANNEL MOSFET, DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MCAC90N10Y-TP |
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: N-CHANNEL MOSFET, DFN5060
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: DFN5060
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 120W
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH