MCAC90N10Y-TP Micro Commercial Components (MCC)
auf Bestellung 3477 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 2.89 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.92 EUR |
| 250+ | 1.83 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.3 EUR |
| 5000+ | 1.25 EUR |
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Technische Details MCAC90N10Y-TP Micro Commercial Components (MCC)
Description: N-CHANNEL MOSFET, DFN5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Power Dissipation (Max): 120W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DFN5060, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V.
Weitere Produktangebote MCAC90N10Y-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MCAC90N10Y-TP | Hersteller : Micro Commercial Components |
 Trans MOSFET N-CH 100V 90A 8-Pin DFN EP T/R |
Produkt ist nicht verfügbar |
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MCAC90N10Y-TP | Hersteller : Micro Commercial Co |
Description: N-CHANNEL MOSFET, DFN5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 120W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V |
Produkt ist nicht verfügbar |
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MCAC90N10Y-TP | Hersteller : Micro Commercial Co |
Description: N-CHANNEL MOSFET, DFN5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 120W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DFN5060 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 50 V |
Produkt ist nicht verfügbar |