Technische Details MCB20P1200LB-TUB Littelfuse
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B, Mounting: SMD, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 62nC, On-state resistance: 98mΩ, Drain current: 25.5A, Case: SMPD-B, Drain-source voltage: 1.2kV, Semiconductor structure: double series, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: tube, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MCB20P1200LB-TUB
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MCB20P1200LB-TUB | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 62nC On-state resistance: 98mΩ Drain current: 25.5A Case: SMPD-B Drain-source voltage: 1.2kV Semiconductor structure: double series Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MCB20P1200LB-TUB | Hersteller : IXYS |
MOSFET Modules SiC MOSFET phaseleg 80mO SMPD-B |
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MCB20P1200LB-TUB | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25.5A; SMPD-B Mounting: SMD Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 62nC On-state resistance: 98mΩ Drain current: 25.5A Case: SMPD-B Drain-source voltage: 1.2kV Semiconductor structure: double series Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Technology: SiC |
Produkt ist nicht verfügbar |