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Technische Details MCB60I1200TZ-TUB IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA, Case: TO268AA, Technology: SiC, Gate charge: 160C, Polarisation: unipolar, Drain current: 70A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Kind of package: tube, On-state resistance: 25mΩ, Mounting: SMD.
Weitere Produktangebote MCB60I1200TZ-TUB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MCB60I1200TZ-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA Case: TO268AA Technology: SiC Gate charge: 160C Polarisation: unipolar Drain current: 70A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 25mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MCB60I1200TZ-TUB |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA
Case: TO268AA
Technology: SiC
Gate charge: 160C
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA
Case: TO268AA
Technology: SiC
Gate charge: 160C
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH