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Technische Details MCB60P1200TLB-TUB IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B, Semiconductor structure: double series, Case: SMPD-B, Technology: SiC, Gate charge: 161nC, Polarisation: unipolar, Drain current: 62A, Kind of channel: enhancement, Drain-source voltage: 1.2kV, Type of transistor: N-MOSFET, Kind of package: tube, On-state resistance: 25mΩ, Mounting: SMD.
Weitere Produktangebote MCB60P1200TLB-TUB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| MCB60P1200TLB-TUB | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B Semiconductor structure: double series Case: SMPD-B Technology: SiC Gate charge: 161nC Polarisation: unipolar Drain current: 62A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Kind of package: tube On-state resistance: 25mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MCB60P1200TLB-TUB |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH