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MCG55P02A-TP

MCG55P02A-TP Micro Commercial Co

MCG55P02A(DFN3333).pdf Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET, DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN3333
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6358 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.78 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details MCG55P02A-TP Micro Commercial Co

Description: P-CHANNEL MOSFET, DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 55A, Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 4.5V, Power Dissipation (Max): 3.2W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN3333, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6358 pF @ 10 V.

Weitere Produktangebote MCG55P02A-TP nach Preis ab 0.86 EUR bis 2.08 EUR

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MCG55P02A-TP MCG55P02A-TP Hersteller : Micro Commercial Co MCG55P02A(DFN3333).pdf Description: P-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 55A
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 4.5V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN3333
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6358 pF @ 10 V
auf Bestellung 13790 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
11+1.70 EUR
100+1.32 EUR
500+1.12 EUR
1000+0.91 EUR
2000+0.86 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
MCG55P02A-TP Hersteller : Micro Commercial Components mcg55p02adfn3333.pdf P-CHANNEL MOSFET, DFN3333
auf Bestellung 80000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MCG55P02A-TP MCG55P02A-TP Hersteller : Micro Commercial Components mcg55p02adfn3333.pdf P Channel MOSFET
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MCG55P02A-TP Hersteller : Micro Commercial Components (MCC) MCG55P02A_DFN3333_-3422410.pdf MOSFETs P-CHANNEL MOSFET, DFN3333
Produkt ist nicht verfügbar
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