MCG55P02A-TP Micro Commercial Components

Description: P-CHANNEL MOSFET, DFN3333, Packaging: Tape & Reel (TR), Package / Case: 8-VDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 55A, Rds On (Max) @ Id, Vgs: 8.3mOhm @ 15A, 4.5V, Power Dissipation (Max): 3.2W (Ta), 38W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN3333, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 149 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6358 pF @ 10 V.