
MCH3478-TL-H onsemi

Description: MOSFET N-CH 30V 2A 3MCPH
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 3-MCPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V
auf Bestellung 92631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1820+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MCH3478-TL-H onsemi
Description: MOSFET N-CH 30V 2A 3MCPH, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V, Power Dissipation (Max): 800mW (Ta), Supplier Device Package: 3-MCPH, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V.
Weitere Produktangebote MCH3478-TL-H
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
MCH3478-TL-H | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 122631 Stücke: Lieferzeit 14-21 Tag (e) |
||
MCH3478-TL-H | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
||
![]() |
MCH3478-TL-H | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 165mOhm @ 1A, 4.5V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 3-MCPH Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 10 V |
Produkt ist nicht verfügbar |