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MCH5839-TL-H

MCH5839-TL-H onsemi


Hersteller: onsemi
Description: MOSFET P-CH 20V 1.5A 5MCPH
Packaging: Tape & Reel (TR)
Package / Case: 5-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 266mOhm @ 750mA, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 800mW (Ta)
Supplier Device Package: 5-MCPH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V
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Technische Details MCH5839-TL-H onsemi

Description: MOSFET P-CH 20V 1.5A 5MCPH, Packaging: Tape & Reel (TR), Package / Case: 5-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 266mOhm @ 750mA, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 800mW (Ta), Supplier Device Package: 5-MCPH, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V.

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MCH5839-TL-H MCH5839-TL-H Hersteller : ON Semiconductor MCH5839-D-1811540.pdf MOSFET PCH+SBD 1.8V DRIVE SERIES
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