MCH5839-TL-H onsemi

Description: MOSFET P-CH 20V 1.5A 5MCPH, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: 5-MCPH, Power Dissipation (Max): 800mW (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 266mOhm @ 750mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Package / Case: 5-SMD, Flat Leads, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount.