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MCH6321-TL-W

MCH6321-TL-W onsemi


mch6321-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 20V 4A 6MCPH
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 6-MCPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
auf Bestellung 2990 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1986+0.24 EUR
Mindestbestellmenge: 1986
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Technische Details MCH6321-TL-W onsemi

Description: MOSFET P-CH 20V 4A 6MCPH, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 6-MCPH, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V.

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MCH6321-TL-W MCH6321-TL-W Hersteller : onsemi mch6321-d.pdf Description: MOSFET P-CH 20V 4A 6MCPH
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 6-MCPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH