MCH6321-TL-W onsemi

Description: MOSFET P-CH 20V 4A 6MCPH, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-MCPH, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 83mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).