Technische Details MCH6344-TL-H ON Semiconductor
Description: MOSFET P-CH 30V 2A 6MCPH, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V, Power Dissipation (Max): 800mW (Ta), Supplier Device Package: 6-MCPH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V.
Weitere Produktangebote MCH6344-TL-H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MCH6344-TL-H | Hersteller : ON Semiconductor |
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auf Bestellung 1815 Stücke: Lieferzeit 21-28 Tag (e) |
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MCH6344-TL-H | Hersteller : onsemi |
Description: MOSFET P-CH 30V 2A 6MCPH Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 10V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-MCPH Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V |
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