MCH6660-TL-H (транзистор)
Produktcode: 113237
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Weitere Produktangebote MCH6660-TL-H (транзистор) nach Preis ab 0.27 EUR bis 0.27 EUR
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MCH6660-TL-H | onsemi |
 Description: MOSFET N/P-CH 20V 2A/1.5A 6MCPHSupplier Device Package: 6-MCPH FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V Rds On (Max) @ Id, Vgs: 136mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A Drain to Source Voltage (Vdss): 20V Power - Max: 800mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Packaging: Bulk |
auf Bestellung 1387754 Stücke: Lieferzeit 10-14 Tag (e) |
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| MCH6660-TL-H |
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Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2A/1.5A 6MCPH
Supplier Device Package: 6-MCPH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 136mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk
Description: MOSFET N/P-CH 20V 2A/1.5A 6MCPH
Supplier Device Package: 6-MCPH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 136mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 128pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
Drain to Source Voltage (Vdss): 20V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Bulk
auf Bestellung 1387754 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1776+ | 0.27 EUR |