Technische Details MCH6661-TL-W ON Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD, Version: ESD, Drain-source voltage: 30V, Drain current: 1.8A, On-state resistance: 188mΩ, Type of transistor: N-MOSFET, Power dissipation: 0.8W, Polarisation: unipolar, Kind of package: reel; tape, Kind of channel: enhancement, Gate-source voltage: ±20V, Mounting: SMD, Case: MCPH6, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MCH6661-TL-W
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MCH6661-TL-W | Hersteller : ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD Version: ESD Drain-source voltage: 30V Drain current: 1.8A On-state resistance: 188mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: MCPH6 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MCH6661-TL-W | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 1.8A SOT363 |
Produkt ist nicht verfügbar |
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MCH6661-TL-W | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 1.8A SOT363 |
Produkt ist nicht verfügbar |
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| MCH6661-TL-W | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD Version: ESD Drain-source voltage: 30V Drain current: 1.8A On-state resistance: 188mΩ Type of transistor: N-MOSFET Power dissipation: 0.8W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Mounting: SMD Case: MCPH6 |
Produkt ist nicht verfügbar |