Technische Details MCH6661-TL-W ON Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 1.8A, Power dissipation: 0.8W, Case: MCPH6, Gate-source voltage: ±20V, On-state resistance: 188mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD.
Weitere Produktangebote MCH6661-TL-W
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
MCH6661-TL-W | Hersteller : onsemi |
 Description: MOSFET 2N-CH 30V 1.8A SOT363 |
Produkt ist nicht verfügbar |
|
|
|
MCH6661-TL-W | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 1.8A SOT363 |
Produkt ist nicht verfügbar |
|
| MCH6661-TL-W | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.8A; 0.8W; MCPH6; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.8A Power dissipation: 0.8W Case: MCPH6 Gate-source voltage: ±20V On-state resistance: 188mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |