MCH6663-TL-H onsemi
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 1.8A 6MCPH
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-MCPH
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Rds On (Max) @ Id, Vgs: 188mOhm @ 900mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
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Technische Details MCH6663-TL-H onsemi
Description: MOSFET N/P-CH 30V 1.8A 6MCPH, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR), Supplier Device Package: 6-MCPH, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V, Rds On (Max) @ Id, Vgs: 188mOhm @ 900mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 88pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 1.8A, 1.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 800mW.

