MCMN2014A-TP Micro Commercial Co
Hersteller: Micro Commercial CoDescription: N-CHANNEL MOSFET,DFN2020-6J
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A
Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V
Power Dissipation (Max): 2.2W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: DFN2020-6J
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
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Technische Details MCMN2014A-TP Micro Commercial Co
Description: N-CHANNEL MOSFET,DFN2020-6J, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A, Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V, Power Dissipation (Max): 2.2W, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: DFN2020-6J, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V.
Weitere Produktangebote MCMN2014A-TP nach Preis ab 0.29 EUR bis 0.74 EUR
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MCMN2014A-TP | Hersteller : Micro Commercial Co |
Description: N-CHANNEL MOSFET,DFN2020-6J Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A Rds On (Max) @ Id, Vgs: 9mOhm @ 9A, 4.5V Power Dissipation (Max): 2.2W Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: DFN2020-6J Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1791 pF @ 10 V |
auf Bestellung 5602 Stücke: Lieferzeit 10-14 Tag (e) |
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