Produkte > STARPOWER SEMICONDUCTOR > MD300HFR120B3S

MD300HFR120B3S STARPOWER SEMICONDUCTOR

pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FF3E20AFC0D3&compId=MD300HFR120B3S.pdf?ci_sign=d4d68748b1e2da41a45c3704b863485752b9241f Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Case: B3.7
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Topology: MOSFET half-bridge
Technology: SiC
Drain-source voltage: 1.2kV
Gate-source voltage: ±20V
Type of semiconductor module: MOSFET transistor
Drain current: 300A
Pulsed drain current: 1.096kA
On-state resistance: 7.5mΩ
Electrical mounting: FASTON connectors; screw
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Technische Details MD300HFR120B3S STARPOWER SEMICONDUCTOR

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC, Case: B3.7, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Topology: MOSFET half-bridge, Technology: SiC, Drain-source voltage: 1.2kV, Gate-source voltage: ±20V, Type of semiconductor module: MOSFET transistor, Drain current: 300A, Pulsed drain current: 1.096kA, On-state resistance: 7.5mΩ, Electrical mounting: FASTON connectors; screw.