MDD2301 NextGen Components
Hersteller: NextGen Components
Description: MOSFET P-CH -20V -3.0A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 6000+ | 0.36 EUR |
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Technische Details MDD2301 NextGen Components
Description: MOSFET P-CH -20V -3.0A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A, Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 2.5 V, Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V.
Weitere Produktangebote MDD2301 nach Preis ab 0.029 EUR bis 0.041 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MDD2301 | Hersteller : Microdiode Electronics |
MDD2301 |
auf Bestellung 3927000 Stücke: Lieferzeit 14-21 Tag (e) |
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MDD2301 Produktcode: 209062
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