MDD2301
Produktcode: 209062
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Transistoren > Transistoren P-Kanal-Feld
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Weitere Produktangebote MDD2301 nach Preis ab 0.038 EUR bis 0.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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MDD2301 | NextGen Components |
Description: MOSFET P-CH -20V -3.0A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V |
auf Bestellung 186000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MDD2301 | Microdiode Electronics |
MDD2301 |
auf Bestellung 3927000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MDD2301 | Microdiode |
MDD2301 SI2301 MOSFET P-CH 20V 3A SOT-23 Транзистори |
auf Bestellung 8660 Stücke: Lieferzeit 14-21 Tag (e) |
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| MDD2301 |
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Hersteller: NextGen Components
Description: MOSFET P-CH -20V -3.0A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
Description: MOSFET P-CH -20V -3.0A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 0.43 EUR |
| MDD2301 |
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Hersteller: Microdiode Electronics
MDD2301
MDD2301
auf Bestellung 3927000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 0.05 EUR |
| 1962000+ | 0.045 EUR |
| 2943000+ | 0.04 EUR |
| 3924000+ | 0.038 EUR |
| MDD2301 |
|
Hersteller: Microdiode
MDD2301 SI2301 MOSFET P-CH 20V 3A SOT-23 Транзистори
MDD2301 SI2301 MOSFET P-CH 20V 3A SOT-23 Транзистори
auf Bestellung 8660 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 0.3 EUR |