MDNA360UB2200PTED IXYS
Hersteller: IXYS
Description: BIPOLARMODULE-RECTIFIER+BRAKE E2
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
Current - Average Rectified (Io): 360 A
Voltage - Peak Reverse (Max): 1.7 kV
Supplier Device Package: E2
Technology: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Diode Type: Three Phase (Braking)
Mounting Type: Chassis Mount
Package / Case: E2
Packaging: Tray
| Anzahl | Privatkunde |
|---|---|
| 1+ | 378.34 EUR |
| 10+ | 354.36 EUR |
| 28+ | 341.03 EUR |
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Technische Details MDNA360UB2200PTED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw, Mechanical mounting: screw, Pulsed collector current: 280A, Max. off-state voltage: 1.7kV, Electrical mounting: Press-in PCB, Semiconductor structure: diode/transistor, Case: E2-Pack, Gate-emitter voltage: ±20V, Collector current: 135A, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Type of semiconductor module: IGBT.
Weitere Produktangebote MDNA360UB2200PTED nach Preis ab 362.39 EUR bis 380.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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MDNA360UB2200PTED | IXYS |
Discrete Semiconductor Modules BIPOLAR MODULE-RECT+BRAKE |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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| MDNA360UB2200PTED |
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Hersteller: IXYS
Discrete Semiconductor Modules BIPOLAR MODULE-RECT+BRAKE
Discrete Semiconductor Modules BIPOLAR MODULE-RECT+BRAKE
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 380.61 EUR |
| 10+ | 362.39 EUR |