auf Bestellung 54 Stücke:
Lieferzeit 678-682 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 312.35 EUR |
| 10+ | 292.56 EUR |
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Technische Details MDNA360UB2200PTED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Max. off-state voltage: 1.7kV, Collector current: 135A, Case: E2-Pack, Electrical mounting: Press-in PCB, Gate-emitter voltage: ±20V, Pulsed collector current: 280A, Mechanical mounting: screw, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MDNA360UB2200PTED nach Preis ab 286.58 EUR bis 317.93 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MDNA360UB2200PTED | Hersteller : IXYS |
 Description: BIPOLARMODULE-RECTIFIER+BRAKE E2Packaging: Tray Package / Case: E2 Mounting Type: Chassis Mount Diode Type: Three Phase (Braking) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: E2 Voltage - Peak Reverse (Max): 1.7 kV Current - Average Rectified (Io): 360 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A Current - Reverse Leakage @ Vr: 200 µA @ 1700 V |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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| MDNA360UB2200PTED | Hersteller : Littelfuse |
High Voltage Standard Rectifier Module |
Produkt ist nicht verfügbar |
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| MDNA360UB2200PTED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 135A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 280A Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MDNA360UB2200PTED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.7kV Collector current: 135A Case: E2-Pack Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 280A Mechanical mounting: screw |
Produkt ist nicht verfügbar |