MDNA360UB2200PTED IXYS
Hersteller: IXYSDescription: BIPOLARMODULE-RECTIFIER+BRAKE E2
Packaging: Tray
Package / Case: E2
Mounting Type: Chassis Mount
Diode Type: Three Phase (Braking)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: E2
Voltage - Peak Reverse (Max): 1.7 kV
Current - Average Rectified (Io): 360 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 360 A
Current - Reverse Leakage @ Vr: 200 µA @ 1700 V
auf Bestellung 41 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 317.93 EUR |
| 10+ | 297.78 EUR |
| 28+ | 286.58 EUR |
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Technische Details MDNA360UB2200PTED IXYS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw, Max. off-state voltage: 1.7kV, Electrical mounting: Press-in PCB, Case: E2-Pack, Mechanical mounting: screw, Type of semiconductor module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper; NTC thermistor; three-phase diode bridge, Gate-emitter voltage: ±20V, Collector current: 135A, Pulsed collector current: 280A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MDNA360UB2200PTED nach Preis ab 304.53 EUR bis 319.84 EUR
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MDNA360UB2200PTED | Hersteller : IXYS |
Discrete Semiconductor Modules BIPOLAR MODULE-RECT+BRAKE |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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| MDNA360UB2200PTED | Hersteller : Littelfuse |
High Voltage Standard Rectifier Module |
Produkt ist nicht verfügbar |
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| MDNA360UB2200PTED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB Case: E2-Pack Mechanical mounting: screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Collector current: 135A Pulsed collector current: 280A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MDNA360UB2200PTED | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB Case: E2-Pack Mechanical mounting: screw Type of semiconductor module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper; NTC thermistor; three-phase diode bridge Gate-emitter voltage: ±20V Collector current: 135A Pulsed collector current: 280A |
Produkt ist nicht verfügbar |