Technische Details MG12200D-BN2MM Littelfuse
Description: IGBT MODULE 1200V 290A 1050W D3, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 200A (Typ), NTC Thermistor: No, Supplier Device Package: D3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 290 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1050 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Weitere Produktangebote MG12200D-BN2MM
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MG12200D-BN2MM | Hersteller : Littelfuse |
 Trans IGBT Module N-CH 1200V 290A 1050000mW 7-Pin Package D Bulk |
Produkt ist nicht verfügbar |
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| MG12200D-BN2MM | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: Y3-DCB Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MG12200D-BN2MM | Hersteller : Littelfuse Inc. |
Description: IGBT MODULE 1200V 290A 1050W D3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 200A (Typ) NTC Thermistor: No Supplier Device Package: D3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1050 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
Produkt ist nicht verfügbar |
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| MG12200D-BN2MM | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: Field Stop; Trench Topology: IGBT half-bridge Type of semiconductor module: IGBT Case: Y3-DCB |
Produkt ist nicht verfügbar |