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Technische Details MG12200D-BN2MM Littelfuse
Description: IGBT MODULE 1200V 290A 1050W D3, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 200A (Typ), NTC Thermistor: No, Supplier Device Package: D3, IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 290 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 1050 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 14 nF @ 25 V.
Weitere Produktangebote MG12200D-BN2MM
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MG12200D-BN2MM | Littelfuse Inc. |
Description: IGBT MODULE 1200V 290A 1050W D3 Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 200A (Typ) NTC Thermistor: No Supplier Device Package: D3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 290 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1050 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 14 nF @ 25 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MG12200D-BN2MM | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Type of semiconductor module: IGBT Technology: Field Stop; Trench Mechanical mounting: screw Pulsed collector current: 400A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Semiconductor structure: transistor/transistor Case: Y3-DCB Gate-emitter voltage: ±20V Collector current: 200A Topology: IGBT half-bridge |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MG12200D-BN2MM |
Hersteller: Littelfuse Inc.
Description: IGBT MODULE 1200V 290A 1050W D3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 200A (Typ)
NTC Thermistor: No
Supplier Device Package: D3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Description: IGBT MODULE 1200V 290A 1050W D3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 200A (Typ)
NTC Thermistor: No
Supplier Device Package: D3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 290 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1050 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MG12200D-BN2MM |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: Y3-DCB
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Type of semiconductor module: IGBT
Technology: Field Stop; Trench
Mechanical mounting: screw
Pulsed collector current: 400A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Semiconductor structure: transistor/transistor
Case: Y3-DCB
Gate-emitter voltage: ±20V
Collector current: 200A
Topology: IGBT half-bridge
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH