MG35P12P3

MG35P12P3 Yangjie Technology


Hersteller: Yangjie Technology
Description: Transistors - IGBTs - Modules P3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 215 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
auf Bestellung 2400 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+80.42 EUR
120+ 75.96 EUR
240+ 71.49 EUR
480+ 67.02 EUR
960+ 60.32 EUR
2400+ 55.85 EUR
Mindestbestellmenge: 24
Produktrezensionen
Produktbewertung abgeben

Technische Details MG35P12P3 Yangjie Technology

Description: Transistors - IGBTs - Modules P3, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Input: Three Phase Bridge Rectifier, Configuration: Three Phase Inverter with Brake, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A, NTC Thermistor: Yes, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 215 W, Current - Collector Cutoff (Max): 1 mA, Input Capacitance (Cies) @ Vce: 2 nF @ 25 V.

Weitere Produktangebote MG35P12P3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
MG35P12P3 Hersteller : YANGJIE TECHNOLOGY MG35P12P3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
MG35P12P3 Hersteller : YANGJIE TECHNOLOGY MG35P12P3.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; P3
Application: Inverter; motors
Mechanical mounting: screw
Pulsed collector current: 70A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: P3
Gate-emitter voltage: ±20V
Collector current: 35A
Topology: boost chopper; IGBT half-bridge x3; NTC thermistor; three-phase diode bridge
Produkt ist nicht verfügbar