MGF65A3H Sanken Electric Co.


86294145964529mgf65a3h_ds_en.pdf Hersteller: Sanken Electric Co.
Trans IGBT Chip N-CH 650V 50A 217000mW 3-Pin(3+Tab) TO-3P
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Technische Details MGF65A3H Sanken Electric Co.

Description: FIELD STOP IGBT WITH FRD 650V/30, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2.73V @ 15V, 30A, Supplier Device Package: TO-3P-3L, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 30ns/90ns, Switching Energy: 500µJ (on), 400µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 60 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 217 W.

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MGF65A3H Hersteller : Sanken Electric USA Inc. fgf65a3h_ds_en.pdf Description: FIELD STOP IGBT WITH FRD 650V/30
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.73V @ 15V, 30A
Supplier Device Package: TO-3P-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/90ns
Switching Energy: 500µJ (on), 400µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 60 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 217 W
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