MGSF1P02LT1/
Hersteller:
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details MGSF1P02LT1/
Description: MOSFET P-CH 20V 750MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), Rds On (Max) @ Id, Vgs: 350mOhm @ 1.5A, 10V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 5 V.
Weitere Produktangebote MGSF1P02LT1/
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MGSF1P02LT1 | Hersteller : ON |
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auf Bestellung 18600 Stücke: Lieferzeit 21-28 Tag (e) |
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MGSF1P02LT1 | Hersteller : onsemi |
Description: MOSFET P-CH 20V 750MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 350mOhm @ 1.5A, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 130 pF @ 5 V |
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