auf Bestellung 31 Stücke:
Lieferzeit 542-546 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 224.68 EUR |
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Technische Details MIEB101H1200EH IXYS
Description: IGBT MODULE 1200V 183A 630W E3, Packaging: Box, Package / Case: E3, Mounting Type: Chassis Mount, Input: Standard, Configuration: Full Bridge Inverter, Operating Temperature: -40°C ~ 125°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: E3, Part Status: Active, Current - Collector (Ic) (Max): 183 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 630 W, Current - Collector Cutoff (Max): 300 µA, Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V.
Weitere Produktangebote MIEB101H1200EH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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MIEB101H1200EH | Hersteller : Littelfuse |
 Trans IGBT Module N-CH 1200V 183A 630000mW 14-Pin Case E-3 Box |
Produkt ist nicht verfügbar |
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| MIEB101H1200EH | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W Application: motors; photovoltaics Topology: H-bridge Power dissipation: 630W Technology: Sonic FRD™; SPT+ Mechanical mounting: screw Pulsed collector current: 200A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 128A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MIEB101H1200EH | Hersteller : IXYS |
Description: IGBT MODULE 1200V 183A 630W E3 Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: E3 Part Status: Active Current - Collector (Ic) (Max): 183 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 630 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V |
Produkt ist nicht verfügbar |
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| MIEB101H1200EH | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 630W Application: motors; photovoltaics Topology: H-bridge Power dissipation: 630W Technology: Sonic FRD™; SPT+ Mechanical mounting: screw Pulsed collector current: 200A Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Case: E3-Pack Gate-emitter voltage: ±20V Collector current: 128A |
Produkt ist nicht verfügbar |