auf Bestellung 10 Stücke:
Lieferzeit 556-560 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 275.07 EUR |
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Technische Details MIEB101W1200EH IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge, Mechanical mounting: screw, Electrical mounting: Press-in PCB, Case: E3-Pack, Application: motors; photovoltaics, Power dissipation: 630W, Type of module: IGBT, Technology: Sonic FRD™; SPT+, Topology: IGBT three-phase bridge, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 128A, Pulsed collector current: 200A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MIEB101W1200EH
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| MIEB101W1200EH | Hersteller : Littelfuse |
 Trans IGBT Module N-CH 1200V 183A 630000mW Box |
Produkt ist nicht verfügbar |
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| MIEB101W1200EH | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E3-Pack Application: motors; photovoltaics Power dissipation: 630W Type of module: IGBT Technology: Sonic FRD™; SPT+ Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 128A Pulsed collector current: 200A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MIEB101W1200EH | Hersteller : IXYS |
Description: IGBT MODULE 1200V 183A 630W E3 Packaging: Box Package / Case: E3 Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A NTC Thermistor: No Supplier Device Package: E3 Current - Collector (Ic) (Max): 183 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 630 W Current - Collector Cutoff (Max): 300 µA Input Capacitance (Cies) @ Vce: 7.43 nF @ 25 V |
Produkt ist nicht verfügbar |
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| MIEB101W1200EH | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Mechanical mounting: screw Electrical mounting: Press-in PCB Case: E3-Pack Application: motors; photovoltaics Power dissipation: 630W Type of module: IGBT Technology: Sonic FRD™; SPT+ Topology: IGBT three-phase bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 128A Pulsed collector current: 200A |
Produkt ist nicht verfügbar |