Technische Details MII100-12A3 IXYS
Category: IGBT modules, Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A, Case: Y4-M5, Application: motors; photovoltaics, Power dissipation: 560W, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Technology: NPT, Topology: IGBT half-bridge, Max. off-state voltage: 1.2kV, Semiconductor structure: transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 90A, Pulsed collector current: 150A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MII100-12A3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MII100-12A3 | Hersteller : Littelfuse |
 Trans IGBT Module N-CH 1200V 135A 560000mW 7-Pin Y4-M5 |
Produkt ist nicht verfügbar |
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| MII100-12A3 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A Case: Y4-M5 Application: motors; photovoltaics Power dissipation: 560W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 90A Pulsed collector current: 150A Anzahl je Verpackung: 1 Stücke |
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MII100-12A3 | Hersteller : IXYS |
Description: IGBT MODULE 1200V 135A 560W Y4M5 Packaging: Bulk Package / Case: Y4-M5 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Y4-M5 IGBT Type: NPT Current - Collector (Ic) (Max): 135 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 560 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V |
Produkt ist nicht verfügbar |
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| MII100-12A3 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 90A Case: Y4-M5 Application: motors; photovoltaics Power dissipation: 560W Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 90A Pulsed collector current: 150A |
Produkt ist nicht verfügbar |