Technische Details MII100-12A3 IXYS
Description: IGBT MODULE 1200V 135A 560W Y4M5, Packaging: Bulk, Package / Case: Y4-M5, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A, NTC Thermistor: No, Supplier Device Package: Y4-M5, IGBT Type: NPT, Current - Collector (Ic) (Max): 135 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 560 W, Current - Collector Cutoff (Max): 5 mA, Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V.
Weitere Produktangebote MII100-12A3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MII100-12A3 | Hersteller : Littelfuse |
 Trans IGBT Module N-CH 1200V 135A 560000mW 7-Pin Y4-M5 |
Produkt ist nicht verfügbar |
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MII100-12A3 | Hersteller : IXYS |
Description: IGBT MODULE 1200V 135A 560W Y4M5 Packaging: Bulk Package / Case: Y4-M5 Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Y4-M5 IGBT Type: NPT Current - Collector (Ic) (Max): 135 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 560 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V |
Produkt ist nicht verfügbar |