MIW50N65AT0Y-BP Micro Commercial Co
Hersteller: Micro Commercial Co
Description: IGBT DISCRETE,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 148 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Test Condition: 300V, 50A, 20Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 214 W
Description: IGBT DISCRETE,TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 148 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Test Condition: 300V, 50A, 20Ohm, 15V
Gate Charge: 250 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 214 W
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Technische Details MIW50N65AT0Y-BP Micro Commercial Co
Description: IGBT DISCRETE,TO-247AB, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 148 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A, Supplier Device Package: TO-247AB, IGBT Type: Trench Field Stop, Test Condition: 300V, 50A, 20Ohm, 15V, Gate Charge: 250 nC, Current - Collector (Ic) (Max): 70 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 214 W.
Weitere Produktangebote MIW50N65AT0Y-BP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MIW50N65AT0Y-BP | Hersteller : Micro Commercial Components (MCC) |
 IGBT DISCRETE,TO-247AB |
Produkt ist nicht verfügbar |