MIXA60HU1200VA IXYS
Hersteller: IXYS
Description: IGBT MOD 1200V 85A 290W V1A-PAK
Packaging: Box
Package / Case: V1A-PAK
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
NTC Thermistor: No
Supplier Device Package: V1A-PAK
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 290 W
Current - Collector Cutoff (Max): 500 µA
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Technische Details MIXA60HU1200VA IXYS
Description: IGBT MOD 1200V 85A 290W V1A-PAK, Packaging: Box, Package / Case: V1A-PAK, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A, NTC Thermistor: No, Supplier Device Package: V1A-PAK, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 290 W, Current - Collector Cutoff (Max): 500 µA.
Weitere Produktangebote MIXA60HU1200VA
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
MIXA60HU1200VA | IXYS |
 IGBT Modules XPT IGBT Module |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 24 Stücke Im Einkaufswagen Stück im Wert von UAH |
| MIXA60HU1200VA | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W Technology: Sonic FRD™; XPT™ Power dissipation: 290W Case: V1-A-Pack Gate-emitter voltage: ±20V Collector current: 60A Topology: boost chopper; buck chopper; H-bridge Type of semiconductor module: IGBT Mechanical mounting: screw Pulsed collector current: 150A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors Semiconductor structure: diode/transistor |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| MIXA60HU1200VA |
|
Hersteller: IXYS
IGBT Modules XPT IGBT Module
IGBT Modules XPT IGBT Module
Produkt ist nicht verfügbar
Mindestbestellmenge: 24 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MIXA60HU1200VA |
Hersteller: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Collector current: 60A
Topology: boost chopper; buck chopper; H-bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Semiconductor structure: diode/transistor
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,buck chopper; 290W
Technology: Sonic FRD™; XPT™
Power dissipation: 290W
Case: V1-A-Pack
Gate-emitter voltage: ±20V
Collector current: 60A
Topology: boost chopper; buck chopper; H-bridge
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 150A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors
Semiconductor structure: diode/transistor
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH