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MJ10015 NTE


MJ10015-ssi-1.pdf
Hersteller: NTE
NPN Дарлингтон, Uкэ=400V, 250Вт, TO-3 Транзистори
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Technische Details MJ10015 NTE

Description: TRANS NPN DARL 400V 50A TO3, Power - Max: 250 W, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector (Ic) (Max): 50 A, Supplier Device Package: TO-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 20A, 5V, Current - Collector Cutoff (Max): 250µA, Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN - Darlington, Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk.

Weitere Produktangebote MJ10015

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
MJ10015 MJ10015 NTE Electronics, Inc MJ10015_16.pdf Description: TRANS NPN DARL 400V 50A TO3
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 20A, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bag
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJ10015 MJ10015 Solid State Inc. MJ10015-ssi.pdf Description: TRANS NPN DARL 400V 50A TO3
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 20A, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJ10015 MJ10015_16.pdf
Hersteller: NTE Electronics, Inc
Description: TRANS NPN DARL 400V 50A TO3
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 20A, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bag
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJ10015 MJ10015-ssi.pdf
Hersteller: Solid State Inc.
Description: TRANS NPN DARL 400V 50A TO3
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 50 A
Supplier Device Package: TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 20A, 5V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH