MJ11013 PBFREE Central Semiconductor Corp
Hersteller: Central Semiconductor Corp
Description: 30A 90V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 200 W
Description: 30A 90V TH TRANSISTOR-BIPOLAR PO
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 200 W
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Technische Details MJ11013 PBFREE Central Semiconductor Corp
Description: 30A 90V TH TRANSISTOR-BIPOLAR PO, Packaging: Tube, Package / Case: TO-204AA, TO-3, Mounting Type: Through Hole, Transistor Type: PNP - Darlington, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V, Frequency - Transition: 4MHz, Supplier Device Package: TO-3, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 90 V, Power - Max: 200 W.
Weitere Produktangebote MJ11013 PBFREE
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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MJ11013 PBFREE | Hersteller : Central Semiconductor |
 Darlington Transistors PNP Power |
Produkt ist nicht verfügbar |