MJB41CT4G onsemi
Hersteller: onsemi
Description: TRANS NPN 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.12 EUR |
| 1600+ | 1.04 EUR |
| 2400+ | 0.99 EUR |
| 4000+ | 0.94 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MJB41CT4G onsemi
Description: TRANS NPN 100V 6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A, Current - Collector Cutoff (Max): 700µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: D2PAK, Part Status: Active, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 2 W.
Weitere Produktangebote MJB41CT4G nach Preis ab 0.94 EUR bis 3.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
MJB41CT4G | onsemi |
Bipolar Transistors - BJT 6A 100V 65W NPN |
auf Bestellung 3822 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
MJB41CT4G | onsemi |
Description: TRANS NPN 100V 6A D2PAK Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 6 A Part Status: Active Supplier Device Package: D2PAK Frequency - Transition: 3MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Current - Collector Cutoff (Max): 700µA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Operating Temperature: -65°C ~ 150°C (TJ) |
auf Bestellung 5188 Stücke: Lieferzeit 10-14 Tag (e) |
|
| MJB41CT4G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 6A 100V 65W NPN
Bipolar Transistors - BJT 6A 100V 65W NPN
auf Bestellung 3822 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.36 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.09 EUR |
| 800+ | 0.98 EUR |
| 2400+ | 0.94 EUR |
| MJB41CT4G |
|
Hersteller: onsemi
Description: TRANS NPN 100V 6A D2PAK
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: D2PAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 700µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Description: TRANS NPN 100V 6A D2PAK
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: D2PAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 700µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
auf Bestellung 5188 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.5 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.5 EUR |