MJB42CT4G onsemi
Hersteller: onsemi
Description: TRANS PNP 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D²PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: D²PAK
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MJB42CT4G onsemi
Description: TRANS PNP 100V 6A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A, Current - Collector Cutoff (Max): 700µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: D²PAK, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 2 W.
Weitere Produktangebote MJB42CT4G nach Preis ab 1.08 EUR bis 2.7 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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MJB42CT4G | Hersteller : onsemi | Bipolar Transistors - BJT 6A 100V 65W PNP |
auf Bestellung 3200 Stücke: Lieferzeit 14-28 Tag (e) |
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MJB42CT4G | Hersteller : onsemi |
Description: TRANS PNP 100V 6A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: D²PAK Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
auf Bestellung 1120 Stücke: Lieferzeit 21-28 Tag (e) |
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MJB42CT4G | Hersteller : ON Semiconductor | Trans GP BJT PNP 100V 6A 2000mW 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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MJB42CT4G | Hersteller : ON Semiconductor | Trans GP BJT PNP 100V 6A 2000mW 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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MJB42CT4G | Hersteller : ON |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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MJB42CT4G | Hersteller : ON Semiconductor |
auf Bestellung 12800 Stücke: Lieferzeit 21-28 Tag (e) |
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MJB42CT4G | Hersteller : ON Semiconductor | Trans GP BJT PNP 100V 6A 2000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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MJB42CT4G | Hersteller : ON Semiconductor | Trans GP BJT PNP 100V 6A 2000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |