MJB45H11T4G onsemi
Hersteller: onsemi
Description: TRANS PNP 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: D2PAK
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 2400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.7 EUR |
1600+ | 1.38 EUR |
2400+ | 1.3 EUR |
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Produktbewertung abgeben
Technische Details MJB45H11T4G onsemi
Description: TRANS PNP 80V 10A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V, Frequency - Transition: 40MHz, Supplier Device Package: D2PAK, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 2 W.
Weitere Produktangebote MJB45H11T4G nach Preis ab 1.36 EUR bis 3.15 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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MJB45H11T4G | Hersteller : onsemi |
Description: TRANS PNP 80V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: D2PAK Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 2893 Stücke: Lieferzeit 21-28 Tag (e) |
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MJB45H11T4G | Hersteller : onsemi | Bipolar Transistors - BJT 8A 80V 50W PNP |
auf Bestellung 1932 Stücke: Lieferzeit 14-28 Tag (e) |
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MJB45H11T4G | Hersteller : ON Semiconductor | Trans GP BJT PNP 80V 10A 2000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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MJB45H11T4G | Hersteller : ON Semiconductor | Trans GP BJT PNP 80V 10A 2000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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MJB45H11T4G | Hersteller : ON Semiconductor | Trans GP BJT PNP 80V 10A 2000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |