auf Bestellung 1785 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.10 EUR |
| 10+ | 0.96 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.47 EUR |
| 1800+ | 0.42 EUR |
| 3600+ | 0.39 EUR |
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Technische Details MJD122RLG onsemi
Description: TRANS NPN DARL 100V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V, Frequency - Transition: 4MHz, Supplier Device Package: DPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.75 W.
Weitere Produktangebote MJD122RLG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| MJD122RLG |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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| MJD122RLG | Hersteller : ON Semiconductor |
 8.0 A, 100 V NPN Darlington Bipolar Power Transistor |
Produkt ist nicht verfügbar |
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MJD122RLG | Hersteller : onsemi |
Description: TRANS NPN DARL 100V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Frequency - Transition: 4MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
Produkt ist nicht verfügbar |