Technische Details MJD3055G ON
Description: TRANS NPN 60V 10A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V, Frequency - Transition: 2MHz, Supplier Device Package: DPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.75 W.
Weitere Produktangebote MJD3055G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| MJD3055G | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 60V 10A 1750mW Automotive 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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MJD3055G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 10A 1750mW Automotive 3-Pin(2+Tab) DPAK Tube |
Produkt ist nicht verfügbar |
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MJD3055G | Hersteller : onsemi |
Description: TRANS NPN 60V 10A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 2MHz Supplier Device Package: DPAK Part Status: Obsolete Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.75 W |
Produkt ist nicht verfügbar |
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MJD3055G | Hersteller : onsemi |
Bipolar Transistors - BJT 10A 60V 20W NPN |
Produkt ist nicht verfügbar |