Technische Details MJD31C1G ON Semiconductor
Description: TRANS NPN 100V 3A IPAK, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: IPAK, Part Status: Obsolete, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.56 W.
Weitere Produktangebote MJD31C1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MJD31C1G | Hersteller : ON Semiconductor |
 Trans GP BJT NPN 100V 3A 1560mW 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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MJD31C1G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 100V 3A 1560mW 3-Pin(3+Tab) IPAK Tube |
Produkt ist nicht verfügbar |
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MJD31C1G | Hersteller : onsemi |
Description: TRANS NPN 100V 3A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: IPAK Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W |
Produkt ist nicht verfügbar |
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MJD31C1G | Hersteller : onsemi |
Bipolar Transistors - BJT 3A 100V 15W NPN |
Produkt ist nicht verfügbar |