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MJD31CHQ-13

MJD31CHQ-13 Diodes Incorporated

MJD31CHQ.pdf Hersteller: Diodes Incorporated
Description: PWR HI VOLTAGE TRANSISTOR TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.45 W
Vce Saturation (Max) @ Ib, Ic: 400mV @ 500µA, 50mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.29 EUR
Mindestbestellmenge: 2500
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Technische Details MJD31CHQ-13 Diodes Incorporated

Description: PWR HI VOLTAGE TRANSISTOR TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V, Supplier Device Package: TO-252 (DPAK), Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.45 W, Vce Saturation (Max) @ Ib, Ic: 400mV @ 500µA, 50mA, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote MJD31CHQ-13 nach Preis ab 0.4 EUR bis 1.28 EUR

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MJD31CHQ-13 MJD31CHQ-13 Hersteller : Diodes Incorporated MJD31CHQ.pdf Description: PWR HI VOLTAGE TRANSISTOR TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 3V
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.45 W
Vce Saturation (Max) @ Ib, Ic: 400mV @ 500µA, 50mA
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 14674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
20+0.88 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 20
MJD31CHQ-13 MJD31CHQ-13 Hersteller : Diodes Incorporated MJD31CHQ-3103807.pdf Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 2277 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
41+1.28 EUR
48+ 1.1 EUR
100+ 0.82 EUR
500+ 0.64 EUR
1000+ 0.51 EUR
2500+ 0.43 EUR
10000+ 0.4 EUR
Mindestbestellmenge: 41
MJD31CHQ-13 Hersteller : Diodes Zetex mjd31chq.pdf 100V NPN Medium Power Transistor In To252 Automotive AEC-Q101
Produkt ist nicht verfügbar
MJD31CHQ-13 Hersteller : Diodes Inc mjd31chq.pdf 100V NPN Medium Power Transistor In To252
Produkt ist nicht verfügbar