auf Bestellung 1749 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.34 EUR |
| 10+ | 0.90 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.53 EUR |
| 1000+ | 0.45 EUR |
| 2500+ | 0.42 EUR |
| 5000+ | 0.39 EUR |
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Technische Details MJD31CT4GN onsemi
Description: TRANS NPN 100V 3A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.56 W.
Weitere Produktangebote MJD31CT4GN
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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MJD31CT4GN | Hersteller : onsemi |
 Description: TRANS NPN 100V 3A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.56 W |
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