MJD31CT4GN onsemi
Hersteller: onsemiDescription: TRANS NPN 100V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
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Technische Details MJD31CT4GN onsemi
Description: TRANS NPN 100V 3A DPAK, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.56 W.
Weitere Produktangebote MJD31CT4GN
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MJD31CT4GN | Hersteller : onsemi |
Bipolar Transistors - BJT 3.0 A, 100 V NPN Bipolar Power Transistor |
Produkt ist nicht verfügbar |