MJD31T4G onsemi
Hersteller: onsemi
Description: TRANS NPN 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
| Anzahl | Preis |
|---|---|
| 2500+ | 0.63 EUR |
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Technische Details MJD31T4G onsemi
Description: TRANS NPN 40V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A, Current - Collector Cutoff (Max): 50µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V, Frequency - Transition: 3MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 1.56 W.
Weitere Produktangebote MJD31T4G nach Preis ab 0.57 EUR bis 2.5 EUR
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MJD31T4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 4092 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD31T4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD31T4G | Hersteller : onsemi |
Description: TRANS NPN 40V 3A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 50µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.56 W |
auf Bestellung 3274 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD31T4G | Hersteller : onsemi |
Bipolar Transistors - BJT 3A 40V 15W NPN |
auf Bestellung 1628 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD31T4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 473 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD31T4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 473 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJD31T4G | Hersteller : ON Semiconductor |
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auf Bestellung 3784 Stücke: Lieferzeit 21-28 Tag (e) |
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MJD31T4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 40V 3A 1560mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| MJD31T4G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 3A; 15W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |