MJD44H11T4G ONSEMI
Hersteller: ONSEMICategory: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 113+ | 0.63 EUR |
| 126+ | 0.57 EUR |
| 164+ | 0.44 EUR |
| 174+ | 0.41 EUR |
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Produktbewertung abgeben
Technische Details MJD44H11T4G ONSEMI
Description: TRANS NPN 80V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V, Frequency - Transition: 85MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.75 W.
Weitere Produktangebote MJD44H11T4G nach Preis ab 0.41 EUR bis 1.77 EUR
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MJD44H11T4G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: reel; tape Frequency: 85MHz Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 388 Stücke: Lieferzeit 7-14 Tag (e) |
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MJD44H11T4G | Hersteller : onsemi |
Bipolar Transistors - BJT 8A 80V 20W NPN |
auf Bestellung 15431 Stücke: Lieferzeit 14-28 Tag (e) |
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MJD44H11T4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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MJD44H11T4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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MJD44H11T4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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MJD44H11T4G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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MJD44H11T4G | Hersteller : onsemi |
Description: TRANS NPN 80V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 85MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
Produkt ist nicht verfügbar |
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MJD44H11T4G | Hersteller : onsemi |
Description: TRANS NPN 80V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 85MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
Produkt ist nicht verfügbar |