MJD5731T4G onsemi
Hersteller: onsemi
Description: TRANS PNP 350V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 1.56 W
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.5 EUR |
| 5000+ | 0.46 EUR |
| 7500+ | 0.44 EUR |
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Technische Details MJD5731T4G onsemi
Description: TRANS PNP 350V 1A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V, Frequency - Transition: 10MHz, Supplier Device Package: DPAK, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 1.56 W.
Weitere Produktangebote MJD5731T4G nach Preis ab 0.57 EUR bis 2.12 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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MJD5731T4G | onsemi |
Description: TRANS PNP 350V 1A DPAK Frequency - Transition: 10MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V Current - Collector Cutoff (Max): 100µA Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Power - Max: 1.56 W Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 1 A Supplier Device Package: DPAK |
auf Bestellung 10380 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD5731T4G | onsemi |
Bipolar Transistors - BJT 1A 350V 15W PNP |
auf Bestellung 12433 Stücke: Lieferzeit 10-14 Tag (e) |
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| MJD5731T4G | ONN |
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auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MJD5731T4G |
|
Hersteller: onsemi
Description: TRANS PNP 350V 1A DPAK
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: DPAK
Description: TRANS PNP 350V 1A DPAK
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Power - Max: 1.56 W
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: DPAK
auf Bestellung 10380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.96 EUR |
| 17+ | 1.24 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.57 EUR |
| MJD5731T4G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 1A 350V 15W PNP
Bipolar Transistors - BJT 1A 350V 15W PNP
auf Bestellung 12433 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.12 EUR |
| 10+ | 1.24 EUR |
| 100+ | 0.69 EUR |
| MJD5731T4G |
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Hersteller: ONN
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)