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MJE170STU

MJE170STU ON Semiconductor / Fairchild

MJE170-1306683.pdf
Hersteller: ON Semiconductor / Fairchild
Bipolar Transistors - BJT PNP Epitaxial Sil
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Technische Details MJE170STU ON Semiconductor / Fairchild

Description: TRANS PNP 40V 3A TO126-3, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: TO-126-3, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Tube.

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MJE170STU MJE170STU onsemi mje172-d.pdf Description: TRANS PNP 40V 3A TO126-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE170STU mje172-d.pdf
MJE170STU
Hersteller: onsemi
Description: TRANS PNP 40V 3A TO126-3
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH