MJE18002G onsemi
Hersteller: onsemi
Description: TRANS NPN 450V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
Description: TRANS NPN 450V 2A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
auf Bestellung 65841 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
513+ | 1.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MJE18002G onsemi
Description: TRANS NPN 450V 2A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V, Frequency - Transition: 13MHz, Supplier Device Package: TO-220, Part Status: Obsolete, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 450 V, Power - Max: 50 W.
Weitere Produktangebote MJE18002G
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
MJE18002G | Hersteller : ONSEMI |
Description: ONSEMI - MJE18002G - MJE18002G, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 65841 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE18002G | Hersteller : ON Semiconductor | Trans GP BJT NPN 450V 2A 50000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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MJE18002G | Hersteller : onsemi |
Description: TRANS NPN 450V 2A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V Frequency - Transition: 13MHz Supplier Device Package: TO-220 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 50 W |
Produkt ist nicht verfügbar |
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MJE18002G | Hersteller : onsemi | Bipolar Transistors - BJT 2A 450V 40W NPN |
Produkt ist nicht verfügbar |