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MJE18002G

MJE18002G onsemi

mje18002-d.pdf
Hersteller: onsemi
Description: TRANS NPN 450V 2A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 2 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
420+1.07 EUR
Mindestbestellmenge: 420
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Technische Details MJE18002G onsemi

Description: TRANS NPN 450V 2A TO-220, Power - Max: 50 W, Voltage - Collector Emitter Breakdown (Max): 450 V, Current - Collector (Ic) (Max): 2 A, Part Status: Obsolete, Supplier Device Package: TO-220, Frequency - Transition: 13MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V, Current - Collector Cutoff (Max): 100µA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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MJE18002G MJE18002G onsemi mje18002-d.pdf Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE18002G MJE18002G onsemi MJE18002_D-2315715.pdf Bipolar Transistors - BJT 2A 450V 40W NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE18002G mje18002-d.pdf
MJE18002G
Hersteller: onsemi
Description: TRANS NPN 450V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 200mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 50 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE18002G MJE18002_D-2315715.pdf
MJE18002G
Hersteller: onsemi
Bipolar Transistors - BJT 2A 450V 40W NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH