MJE181G ON Semiconductor
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
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Technische Details MJE181G ON Semiconductor
Description: TRANS NPN 60V 3A TO-126, Packaging: Bulk, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Frequency - Transition: 50MHz, Supplier Device Package: TO-126, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.5 W.
Weitere Produktangebote MJE181G nach Preis ab 0.44 EUR bis 1.83 EUR
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MJE181G | Hersteller : onsemi |
 Bipolar Transistors - BJT 3A 60V 12.5W NPN |
auf Bestellung 2286 Stücke: Lieferzeit 10-14 Tag (e) |
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MJE181G | Hersteller : onsemi |
Description: TRANS NPN 60V 3A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.5 W |
auf Bestellung 522 Stücke: Lieferzeit 10-14 Tag (e) |
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MJE181G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 3A 1500mW 3-Pin(3+Tab) TO-225 Box |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJE181G | Hersteller : Aptina Imaging |
Trans GP BJT NPN 60V 3A 1500mW 3-Pin(3+Tab) TO-225 Box |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE181G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 3A 1500mW 3-Pin(3+Tab) TO-225 Box |
Produkt ist nicht verfügbar |
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MJE181G | Hersteller : ON Semiconductor |
Trans GP BJT NPN 60V 3A 1500mW 3-Pin(3+Tab) TO-225 Box |
Produkt ist nicht verfügbar |
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MJE181G | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 3A; 12.5W; TO225 Case: TO225 Mounting: THT Kind of package: bulk Current gain: 50...250 Collector-emitter voltage: 60V Frequency: 50MHz Collector current: 3A Type of transistor: NPN Power dissipation: 12.5W Polarisation: bipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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MJE181G | Hersteller : ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 3A; 12.5W; TO225 Case: TO225 Mounting: THT Kind of package: bulk Current gain: 50...250 Collector-emitter voltage: 60V Frequency: 50MHz Collector current: 3A Type of transistor: NPN Power dissipation: 12.5W Polarisation: bipolar |
Produkt ist nicht verfügbar |