Produkte > ONSEMI > MJE181G
MJE181G

MJE181G onsemi


mje171-d.pdf
Hersteller: onsemi
Bipolar Transistors - BJT 3A 60V 12.5W NPN
auf Bestellung 1610 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.78 EUR
10+1.12 EUR
100+0.74 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details MJE181G onsemi

Description: TRANS NPN 60V 3A TO-126, Power - Max: 1.5 W, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 3 A, Supplier Device Package: TO-126, Frequency - Transition: 50MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A, Operating Temperature: -65°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-225AA, TO-126-3, Packaging: Bulk.

Weitere Produktangebote MJE181G nach Preis ab 0.74 EUR bis 1.8 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
MJE181G MJE181G Hersteller : onsemi mje171-d.pdf Description: TRANS NPN 60V 3A TO-126
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.8 EUR
16+1.12 EUR
100+0.74 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH