MJE3055TTU

MJE3055TTU ON Semiconductor / Fairchild


MJE3055T-1306692.pdf Hersteller: ON Semiconductor / Fairchild
Bipolar Transistors - BJT NPN Sil Transistor
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Lieferzeit 14-28 Tag (e)
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Technische Details MJE3055TTU ON Semiconductor / Fairchild

Description: TRANS NPN 60V 10A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A, Current - Collector Cutoff (Max): 700µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V, Frequency - Transition: 2MHz, Supplier Device Package: TO-220-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 10 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 75 W.

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MJE3055TTU MJE3055TTU Hersteller : ON Semiconductor 3673103559589917mje3055t.pdf Trans GP BJT NPN 60V 10A 600mW 3-Pin(3+Tab) TO-220 Tube
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MJE3055TTU MJE3055TTU Hersteller : onsemi MJE3055T.pdf Description: TRANS NPN 60V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Produkt ist nicht verfügbar