MJE5850G

MJE5850G ON Semiconductor


mje5850-d.pdf Hersteller: ON Semiconductor
Trans GP BJT PNP 300V 8A 80000mW 3-Pin(3+Tab) TO-220AB Tube
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Technische Details MJE5850G ON Semiconductor

Description: TRANS PNP 300V 8A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A, DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V, Supplier Device Package: TO-220, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 300 V, Power - Max: 80 W.

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MJE5850G MJE5850G Hersteller : onsemi mje5850-d.pdf Description: TRANS PNP 300V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 80 W
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MJE5850G MJE5850G Hersteller : onsemi MJE5850_D-2315747.pdf Bipolar Transistors - BJT 8A 300V 80W PNP
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