MJE800STU onsemi
Hersteller: onsemi
Description: TRANS NPN DARL 60V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
Description: TRANS NPN DARL 60V 4A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
auf Bestellung 3659 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
100+ | 7.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details MJE800STU onsemi
Description: TRANS NPN DARL 60V 4A TO126-3, Packaging: Tube, Package / Case: TO-225AA, TO-126-3, Mounting Type: Through Hole, Transistor Type: NPN - Darlington, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A, Current - Collector Cutoff (Max): 100µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V, Supplier Device Package: TO-126-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 40 W.
Weitere Produktangebote MJE800STU nach Preis ab 7.64 EUR bis 7.64 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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MJE800STU | Hersteller : onsemi |
Description: TRANS NPN DARL 60V 4A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 40 W |
auf Bestellung 3659 Stücke: Lieferzeit 21-28 Tag (e) |
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MJE800STU | Hersteller : ON Semiconductor / Fairchild | Darlington Transistors NPN Si Transistor Epitaxial Darlington |
auf Bestellung 11518 Stücke: Lieferzeit 14-28 Tag (e) |
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MJE800-STU |
auf Bestellung 16200 Stücke: Lieferzeit 21-28 Tag (e) |
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MJE800STU | Hersteller : ON Semiconductor | Trans Darlington NPN 60V 4A 40000mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
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MJE800STU | Hersteller : onsemi |
Description: TRANS NPN DARL 60V 4A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 40 W |
Produkt ist nicht verfügbar |