Technische Details MKE38P600LB Littelfuse
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series, Mounting: SMD, Technology: CoolMOS™, Semiconductor structure: double series, Kind of channel: enhancement, Case: SMPD, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Gate charge: 0.19µC, Reverse recovery time: 660ns, On-state resistance: 45mΩ, Gate-source voltage: ±20V, Drain current: 50A, Drain-source voltage: 600V, Anzahl je Verpackung: 20 Stücke.
Weitere Produktangebote MKE38P600LB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| MKE38P600LB | Hersteller : IXYS |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series Mounting: SMD Technology: CoolMOS™ Semiconductor structure: double series Kind of channel: enhancement Case: SMPD Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 0.19µC Reverse recovery time: 660ns On-state resistance: 45mΩ Gate-source voltage: ±20V Drain current: 50A Drain-source voltage: 600V Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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| MKE38P600LB | Hersteller : IXYS |
Description: MOSFET N-CH 600V 50A SMPD |
Produkt ist nicht verfügbar |
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MKE38P600LB | Hersteller : IXYS |
MOSFET SMPD MOSFETs |
Produkt ist nicht verfügbar |
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| MKE38P600LB | Hersteller : IXYS |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 600V; 50A; SMPD; double series Mounting: SMD Technology: CoolMOS™ Semiconductor structure: double series Kind of channel: enhancement Case: SMPD Type of transistor: N-MOSFET x2 Polarisation: unipolar Gate charge: 0.19µC Reverse recovery time: 660ns On-state resistance: 45mΩ Gate-source voltage: ±20V Drain current: 50A Drain-source voltage: 600V |
Produkt ist nicht verfügbar |