Technische Details MKE38RK600DFELB IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 50A, Case: SMPD, Gate-source voltage: ±20V, On-state resistance: 45mΩ, Mounting: SMD, Gate charge: 0.19µC, Kind of channel: enhancement, Reverse recovery time: 50ns, Semiconductor structure: diode/transistor, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MKE38RK600DFELB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MKE38RK600DFELB | Hersteller : Littelfuse |
 Trans MOSFET N-CH 600V 50A 9-Pin SMPD-X Blister |
Produkt ist nicht verfügbar |
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| MKE38RK600DFELB | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Case: SMPD Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhancement Reverse recovery time: 50ns Semiconductor structure: diode/transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MKE38RK600DFELB | Hersteller : IXYS |
Description: MOSFET N-CH 600V 50A SMPD |
Produkt ist nicht verfügbar |
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| MKE38RK600DFELB | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Case: SMPD Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 0.19µC Kind of channel: enhancement Reverse recovery time: 50ns Semiconductor structure: diode/transistor |
Produkt ist nicht verfügbar |