Technische Details MKE38RK600DFELB IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor, Mounting: SMD, Drain current: 50A, On-state resistance: 45mΩ, Type of transistor: N-MOSFET, Reverse recovery time: 50ns, Semiconductor structure: diode/transistor, Polarisation: unipolar, Gate charge: 0.19µC, Technology: CoolMOS™, Kind of channel: enhancement, Gate-source voltage: ±20V, Drain-source voltage: 600V, Case: SMPD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote MKE38RK600DFELB
| Foto | Bezeichnung | Hersteller | Beschreibung |
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MKE38RK600DFELB | Hersteller : Littelfuse |
 Trans MOSFET N-CH 600V 50A 9-Pin SMPD-X Blister |
Produkt ist nicht verfügbar |
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| MKE38RK600DFELB | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor Mounting: SMD Drain current: 50A On-state resistance: 45mΩ Type of transistor: N-MOSFET Reverse recovery time: 50ns Semiconductor structure: diode/transistor Polarisation: unipolar Gate charge: 0.19µC Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 600V Case: SMPD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| MKE38RK600DFELB | Hersteller : IXYS |
Description: MOSFET N-CH 600V 50A SMPD |
Produkt ist nicht verfügbar |
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| MKE38RK600DFELB | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 50A; SMPD; diode/transistor Mounting: SMD Drain current: 50A On-state resistance: 45mΩ Type of transistor: N-MOSFET Reverse recovery time: 50ns Semiconductor structure: diode/transistor Polarisation: unipolar Gate charge: 0.19µC Technology: CoolMOS™ Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 600V Case: SMPD |
Produkt ist nicht verfügbar |